advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v low on-resistance r ds(on) 14m fast switching i d -10.7a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 200809152 thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 storage temperature range continuous drain current 3 -8.6 pulsed drain current 1 -50 parameter drain-source voltage gate-source voltage continuous drain current 3 halogen-free product 1 AP4407GM-HF rating -30 + 25 -10.7 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.015 -v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-10a - - 14 m ? ?
a p4407gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 01122 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -5.0v -4.5v -4.0v v g =-3.0v 10 15 20 25 357911 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-10a t a =25 o c 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs = -10v i d =-10a 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 40 0123 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -5.0v -4.5v -4.0v v g =-3.0v
AP4407GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 14 024681012141618 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -10a v ds = -24v 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse rthja = 125 : /w 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s 10s dc t a =25 o c single pulse
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 4407 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product e meet rohs requirement
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